| 1. | Negative biases in conditional reasoning
假言推理的否定词效应 |
| 2. | Process parameters included rf power , substrate negative bias voltage , substrate temperature and working gas pressure
工艺参数有射频功率、衬底负偏压、衬底温度和工作气压等。 |
| 3. | At 200v of substrate negative bias voltage and 300w of rf power , the content of cubic phase in bn films reaches 92 . 8 %
当负偏压为200v ，功率为300w时，薄膜中立方相的含量达到92 . 8 。 |
| 4. | For obtaining cbn thin films , it is necessary that substrate negative bias voltage is not lower than 90v and r . f power is not lower than 200w
若要得到立方氮化硼薄膜，负偏压不能低于90v ，功率不能低于200w 。 |
| 5. | Substrate negative bias voltage deeply impacts the nucleation and growth of cbn . there is a threshold value of bias voltage for depositing cbn
衬底负偏压对立方氮化硼的成核和生长有十分重要的影响，存在偏压阈值，低于该值不能产生立方氮化硼。 |
| 6. | And these limit the diamond film application . in order to grow high quality diamond film , this experiment using cleanout and negative bias to improve nucleus
为了得到高质量的金刚石薄膜本研究对于石英玻璃的表面进行了清洗并用了负偏压增强形核的方法。 |
| 7. | The induced formation and motion of copper steps on the surface of cu covered with glycine occur in the area where has been scanned by scanning tunneling microscope with higher negative bias voltage v
2 . 5v的条件下使用扫描隧道显微镜stm扫描吸附有甘氨酸的cu 111表面，在扫描区域内原有铜台阶的形状发生了变化并产生了新的铜台阶。 |
| 8. | C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films . low bias is helpful for the basal plane orientation , while under high bias the films shows that the c axis of bn was nearly parallel to the substrate
C ）偏压或离子轰击对取向有重要影响，低偏压有利于形成基面对衬底平行的取向，而在高偏压下，薄膜表现为c轴平行衬底的取向。 |
| 9. | As regards sk ( bias angle ) and kg ( kurtosis ) values , the fluvio - lacustrine facies or palaeosols increases considerably compared with the aeolian sands . the former displays positive bias and the latter often approximately symmetrical distribution with only a minority negative bias
就sk和kg变化而言，河湖相或古土壤值较之风成砂明显增高，前者呈正偏，后者常常表现近对称分布，仅少数呈负偏。 |
| 10. | This work using negative bias to improve the nucleus density , and quartz glass was used as a kind of depositional substrate and diamond was deposited upon it in an mpcvd equipment . the diamond coating was characterized by xrd sem rama xps . the experimental results show that the mostly component of the film is diamond , and the results show that the sic is exist . it show that the diamond film not grow directly on the quartz glass , there exist the sic transition layer
在mpcvd制备得到了金刚石薄膜之后，分别用x衍射( xrd ) 、扫描电镜( sem ) 、拉曼谱( raman )和光电子能谱( xps )等测试手段对金刚石薄膜进行了表征，结果表明了生长出来的薄膜的主要成分是金刚石，同时发现了sic的存在，这表明了用mpcvd在石英玻璃上生长金刚石薄膜时，不是直接生长在sio _ 2上，而是有一个过渡层sic ，然后在过渡层上再生长一层金刚石薄膜。 |
